APTDR40X1601G APTDR40X1601G C rev 2 october, 2012 www.microsemi.com 1-4 absolute maximum ratings symbol parameter max ratings unit v r maximum dc reverse voltage v rrm maximum peak repetitive reverse voltage 1600 v i f dc forward current t c = 80c 40 i fsm non-repetitive forward surge current t=10ms t j = 45c 400 a these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com 6 12 2 9 11 5 7 8 10 1 all multiple inputs and outputs must be shorted together 1/2 ; 5/6 ; 7/8 ; 9/10 ; 11/12 v rrm = 1600v i c = 40a @ tc = 80c application ? input rectifiers for inverter ? battery dc power supply features ? high blocking voltage ? high surge current ? low leakage current ? very low stray inductance - symmetrical design ? high level of integration benefits ? solderable terminals for easy pcb mounting ? direct mounting to heatsink (isolated package) ? low profile ? rohs compliant 3 phase rectifier bridge power module downloaded from: http:///
APTDR40X1601G APTDR40X1601G C rev 2 october, 2012 www.microsemi.com 2-4 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 20 a i r reverse current v r = 1600v t j = 125c 2 ma t j = 25c 1.3 v f forward voltage i f = 40a t j = 125c 1.1 v v t on C state voltage 0.8 v r t on C state slope resistance 10.5 m ? thermal and package characteristics symbol characteristic min typ max unit r thjc junction to case thermal resistance 1.5 c/w v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2 3 n.m wt package weight 80 g sp1 package outline (dimensions in mm) see application note 1904 - mounting instructions for sp1 power modules on www.microsemi.com downloaded from: http:///
APTDR40X1601G APTDR40X1601G C rev 2 october, 2012 www.microsemi.com 3-4 typical performance curve maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) forward characteristic t j =25c t j =125c 0 20 40 60 80 0 . 00 . 40 . 81 . 21 . 62 . 0 v f (v) i f (a) non-repetitive forward surge current t j =45c t j =125c 0 100 200 300 400 0.01 0.1 t (s) i fsm (a) 50hz 80% v rrm downloaded from: http:///
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